Packaged in a compact 3mm x 4.2mm x 0.85mm module, the NZ5633S exhibits high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the feature of RoHS compliant, the NZ5633S is free of hazardous substances and rated as green product.

The NZ5633S is a broadband power amplifier module developed for FDD LTE/ WCDMA multiband applications. With advanced InGaP HBT technology, this module supports Band 1 (1920-1980MHz), Band 2 (1850-1910MHz), Band 3 (1710-1785MHz), Band 4 (1710-1755MHz), Band 5 (824-849MHz), Band 8 (880-915MHz), Band 20 (832-862MHz) and Band 26 (814-849MHz). It meets the stringent linearity requirements of LTE and WCDMA Rel99 specifications, as well as those of HSDPA, HSUPA and HSPA+.

The NZ5633S is self contained with two GaAs power amplifiers, a bias controller, input & output matching networks and an internal directional coupler. The GaAs PAs provide RF amplification in linear mode, while the integrated bias controller provides regulated voltage according to input control logic, which can be compatible with most of mobile handset or data devices. The integrated high-directivity coupler is designed as daisychain type to facilitate the use of the multi-band FDD LTE and WCDMA PA applications. The module is fully matched to 50 ohms at all RF ports.

Supporting two (high and low) power modes with different gain settings, the NZ5633S reduces current consumption significantly in both high and low power operations. Compatible with APT (Average Power Tracking) technology to extend battery life, the NZ5633S delivers improved efficiency with VCC2 supplied from external DC-DC converter, which can be set from 0.8~3.4V accordingly to different output power level.