Packaged in a 4mm x 6.8mm x 0.75mm module, the NZ5627G performs with high efficiency, high linearity, low temperature variation, strong reliability and robust ruggedness. In addition to the feature of RoHS compliant, the NZ5627G is free of hazardous substances and rated as green product.

The NZ5627G is a 42-pin power amplifier module developed for high linearity applications. With advanced InGaP HBT technology, the module supports multi-band CDMA&WCDMA&TD-SCDMA&FDD-LTE&TDD-LTE application, including CDMA Bands BC0/BC1/BC4/BC6/BC10/BC15, WCDMA Band1/2/3/4/5/8/9, TD-SCDMA Band34/39, FDD-LTE Band1/2/3/4/5/7/8/9/12/13/14/17/20/25/26/28/30/66/71, TDD-LTE Band 38/39/40/41 and Uplink Carrier Aggregation (CA) support for Band 39 (up to 35 MHz), Band 1, 2/25, 3, 4, 7, 38, 40, 41 (up to 40 MHz). The NZ5627G meets the stringent linearity requirements of LTE QPSK specifications, as well as those of 16QAM & 64QAM modulation.

The NZ5627G is self contained with three GaAs power amplifiers for low, mid and high bands, a CMOS controller, a SOI 3P4T switch, a SP5T switch ,a SP6T switch and input & output matching networks. The GaAs PA provides RF amplification in linear mode, while the CMOS controller provides regulated voltage through MIPI RFFE interface. The integrated SOI switch supports band selection and Tx/Rx function. The module is fully matched to 50 ohms at all RF ports.

With Lansus's state-of-the-art technology and optimized bias table, the NZ5627G reduces current consumption significantly in both high and low power operations. Compatible with APT (Average Power Tracking) technology to extend battery life, the NZ5627G efficiency can be further improved with VCC1/VCC2 supplied from DC-DC converter, which can be set from 0.5~3.4V accordingly to different output power level.